PART |
Description |
Maker |
IXGH30N60B4 |
High-Gain IGBT
|
IXYS Corporation
|
AD600AR-REEL AD600AR-REEL7 AD600JR-REEL AD600JR-RE |
Gain range:0 to 40dB ; -7.5V; 600mW; daual, low noise, wideband variable gain amplifier. For ultrasound and sonar time-gain control, high performance audio and RF AGC systems and signal measurement
|
Analog Devices
|
27C64-25E/P 27C64-25E/J 27C64-25E/TS 27C64-25E/SO |
330MHz, Gain of 1/Gain of 2 Closed-Loop Buffers Evaluation Kit for the MAX4159, MAX4259 High-Speed, Low-Distortion, Differential Line Receivers SOT23, Rail-to-Rail, Fixed-Gain, Gain Amps/Open-Loop Op Amps x8存储 x8 EPROM x8存储
|
Microchip Technology, Inc. TUSONIX, Inc.
|
AGB3307 AGB3307S24Q1 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... Gain Block Amplifiers 50-ohm High Linearity Low Noise Wideband Gain Block
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|
C10508-01-15 |
Variable gain, stable detection even at high gain
|
Hamamatsu Corporation
|
2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr. AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
IXGH50N60B2 IXGT50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT HiPerFASTTM IGBT B2-Class High Speed IGBTs
|
IXYS Corporation
|
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Toshiba Corporation
|
SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT Ultra-Fast IGBT Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FGH20N60SFD FGH20N60SFDTU |
600V, 20A Field Stop IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-247AB ROHS COMPLIANT PACKAGE-3 High current capability, High input impedance
|
http:// Fairchild Semiconductor, Corp. List of Unclassifed Manufacturers
|
IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp. IXYS[IXYS Corporation]
|
PE15A1006 |
40 dB Gain, 1.1 dB NF, 15 dBm, 3.1 GHz to 3.5 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|